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| Excelics * * * * * * 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 27% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+36dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 4W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-4P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=24mA -13 2200 rd EIB1314-4P MAX MIN 35 6.5 TYP 36 7.5 MAX UNIT dBm dB MIN 35.5 7.5 TYP 36.5 8.5 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 27 1760 43 2880 3000 -1.0 -15 4.5 -2.5 3400 2200 22 1700 49* 2720 1400 -2.0 -15 4.5 o % mA dBm 3400 mA mS -3.5 V V C/W Drain Breakdown Voltage Igd=9.6mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical -45dBc IM3 at Pout=26dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -8V Idss 360mA 35dBm 175oC -65/175oC 30W 8V -3V 3120mA 60mA @ 3dB Compression 150oC -65/150oC 25W CONTINUOUS2 Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085 Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com |
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